Prof. Singisetti’s UB research group pioneers advanced semiconductors and devices for power, AI, memory, and next-generation communication systems
Prof. Singisetti’s research group at the University at Buffalo (UB) is dedicated to advancing the understanding of the fundamental electrical and electronic properties of solid-state materials and translating that knowledge into next-generation technologies.
The group’s work spans a wide range of material systems—including semiconductors, dielectrics, ferroelectrics, and magnetoelectrics—with a focus on harnessing their intrinsic properties to enable high-performance devices.
These devices address critical needs in power electronics, artificial intelligence hardware, and advanced communication systems, with broad societal and technological impact.
Current research
At UB, Prof. Singisetti’s group continues to push the boundaries of semiconductor research. Current efforts focus on:
- Wide- and Ultra-Wide-Bandgap Semiconductors: Investigating materials such as gallium oxide for high-voltage, high-efficiency electronic devices. His team has conducted pioneering studies of low- and high-field transport in gallium oxide, achieving several key milestones, including the demonstration of multi-kV MOSFETs and high-frequency, high-voltage RF transistors. These advances have positioned UB as a leader in gallium oxide device technology.
- Magnetoelectric and Non-Classical Devices: Exploring magnetoelectric-based device concepts for novel logic and memory architectures that move beyond traditional CMOS scaling.
- Emerging Semiconductors: Using first-principles calculations to study electron transport in materials such as AlGaN alloys, providing essential insight into device performance under diverse operating conditions.
- Low-Power Electronics for Future Computing: Identifying transport limitations in layered materials such as trichalcogenides (e.g., TiS₃), with the goal of enabling energy-efficient computing platforms.
Collaboration
In addition to advancing device physics, the group actively collaborates with national laboratories, industry partners, and peer institutions to accelerate the transition of emerging materials from discovery to application. Their work continues to demonstrate the transformative potential of new semiconductors for sustainable power, faster computation, and next-generation communication systems.
Career contributions
Throughout his career, Prof. Singisetti has been at the forefront of semiconductor innovation. His contributions span multiple generations of device technologies, from silicon nanoelectronics and III-V MOSFETs to N-polar GaN millimeter-wave transistors.
During his postdoctoral research, he was among the first to demonstrate enhancement-mode mm-wave N-polar transistors, establishing a foundation for future device breakthroughs.
