Dr. Uttam Singisetti is a Professor of Electrical Engineering at the University at Buffalo (UB). He received his PhD in Electrical and Computer Engineering from the University of California, Santa Barbara in 2009. He received MS degree from Arizona State University in 2004 and BS degree from the Indian Institute of Technology, Madras in 2001.
His research interests are in the areas of low-power devices for logic and memory; III-N based THz devices and next generation wide and ultra-wide bandgap materials and devices. At UB, he conducted pioneering fundamental work in understanding the low field and high field transport in Ga2O3 and demonstrated highest performance high voltage and RF devices. He is a recipient of Senior Researcher of the Year (2019-2020) award and UB Exceptional Scholar: Sustained Achievement Award in 2024. He has co-authored more than 150 publications in peer reviewed journals and conference proceedings with > 5100 citations. He is a Senior Member of the IEEE Electron Device Society.
He served on the technical program committee of the IEEE Device Research Conference and on the IEEE EDS Technical Committee on Compound Semiconductor Devices and Circuits. He was Chair of a successful GOX2023 conference in 2023. He has served as Guest Editors in several journals including IEEE Transactions on Power Electronics, Scientific Reports and APL Materials.
