A new semiconductor inspection and metrology platform, developed through a collaboration between Nagoya University and its startup, Photoelectron Soul Inc. (PeS), is set to begin validation in KIOXIA’s advanced production lines
This technology, built around a GaN-based electron beam (e-beam) system, shows the potential for a breakthrough in overcoming long-standing barriers in semiconductor manufacturing inspection.
In late September 2025, KIOXIA Iwate Corporation will begin real-world evaluation of the technology developed by PeS in collaboration with the Amano–Honda Laboratory at Nagoya University. The platform will improve defect detection and production yields, especially in complex nanoscale and 3D semiconductor devices.
GaN photocathodes allow durable, high-precision E-beam systems. Electron beam technologies using semiconductor photocathodes have consistently been recognised for their potential in chip inspection and metrology. However, their fragility has previously limited industrial application. PeS and Nagoya University researchers have now overcome this challenge by developing gallium nitride (GaN) photocathodes with over twenty times the durability of earlier technologies.
Building on this material innovation, PeS created a next-generation electron gun specifically optimised for GaN photocathodes. These electron guns provide the stability, longevity, and operational reliability necessary in semiconductor manufacturing environments.
Digital selective e-Beaming (DSeB)
A key innovation from PeS is its patented Digital Selective e-Beaming (DSeB) technique. This method synchronises laser light irradiation of the photocathode with the scanning of the e-beam in a scanning electron microscope (SEM). It allows pixel-level control of e-beam intensity and location, allowing unprecedented targeting precision during inspection.
This selective targeting opens up new inspection possibilities that were previously considered unattainable with conventional SEM-based methods, especially in two critical areas of chip manufacturing.
The first application of DSeB is in non-contact electrical inspection of nanoscale transistors. Traditional methods struggle to test individual transistors within today’s densely packed chips. PeS’s approach allows selective irradiation of specific transistor regions, using electron-beam-induced charging to mimic gate bias and visualise switching behaviour, without any physical contact.
The second challenge addressed is the inspection of high-aspect-ratio structures in advanced 2.5D and 3D devices. These structures, such as deep silicon trenches, are complex to inspect using traditional methods due to their depth and narrow openings. DSeB enables precise targeting of trench bottoms, revealing defects and residues deep within these structures that could otherwise go undetected.
Real-world validation at KIOXIA Iwate
KIOXIA Iwate’s production lines will now serve as the testing ground for this innovative technology. The evaluation will focus on assessing improvements in defect detection, root cause analysis, and overall manufacturing yield.
This collaboration is being closely watched as a model case for the successful transfer of university-originated technology into industrial settings. If successful, the GaN-based e-beam platform could become a core tool in next-generation semiconductor manufacturing.
